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HCTS11MS
November 1994
Radiation Hardened Triple 3-Input AND Gate
Pinouts
14 PIN CERAMIC DUAL-IN-LINE MIL-STD-1835 DESIGNATOR CDIP2-T14, LEAD FINISH C TOP VIEW
A1 1 14 VCC 13 C1 12 Y1 11 C3 10 B3 9 A3 8 Y3
Features
* 3 Micron Radiation Hardened SOS CMOS * Total Dose 200K or 1 Mega-RAD (Si) * Dose Rate Upset >1010 RAD(Si)/s 20ns Pulse * Latch-Up Free Under Any Conditions * Military Temperature Range: -55 C to +125 C * Significant Power Reduction Compared to LSTTL ICs * DC Operating Voltage Range: 4.5V to 5.5V * LSTTL Input Compatibility - VIL = 0.8V Max. - VIH = VCC/2 Min * Input Current Levels Ii 5A at VOL, VOH
o o
B1 2 A2 3 B2 4 C2 5 Y2 6 GND 7
Description
The Intersil HCTS11MS is a Radiation Hardened Triple 3Input AND Gate. A high on all inputs forces the output to a High state. The HCTS11MS utilizes advanced CMOS/SOS technology to achieve high-speed operation. This device is a member of radiation hardened, high-speed, CMOS/SOS Logic Family. The HCTS11MS is supplied in a 14 lead Weld Seal Ceramic flatpack (K suffix) or a Weld Seal Ceramic Dual-In-Line Package (D suffix).
14 PIN CERAMIC FLAT PACK MIL-STD-1835 DESIGNATOR CDFP3-F14, LEAD FINISH C TOP VIEW
A1 B1 A2 B2 C2 Y2 GND 1 2 3 4 5 6 7 14 13 12 11 10 9 8 VCC C1 Y1 C3 B3 A3 Y3
Truth Table
INPUTS An L L L L H H H H Bn L L H H L L H H Cn L H L H L H L H OUTPUTS Yn L L L L L
Functional Diagram
An
Bn
Yn
Cn
L L H
NOTE: L = Logic Level Low, H = Logic level High
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. http://www.intersil.com | Copyright (c) Intersil Corporation 1999
File Number
2409.1
7-141
Specifications HCTS11MS
Absolute Maximum Ratings
Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.5V to 7.0V Input Voltage Range, All Inputs . . . . . . . . . . . . .-0.5V to VCC +0.5V DC Input Current, Any One Input . . . . . . . . . . . . . . . . . . . . . . . .10mA DC Drain Current, Any One Output. . . . . . . . . . . . . . . . . . . . . . .25mA (All Voltage Reference to the VSS Terminal) Storage Temperature Range (TSTG) . . . . . . . . . . . -65oC to +150oC Lead Temperature (Soldering 10sec) . . . . . . . . . . . . . . . . . . +265oC Junction Temperature (TJ) . . . . . . . . . . . . . . . . . . . . . . . . . . +175oC ESD Classification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Class 1
Reliability Information
Thermal Impedance . . . . . . . . . . . . . . . . ja jc Weld Seal DIC . . . . . . . . . . . . . . . . . . . 75oC/W 16oC/W Weld Seal Flat Pack . . . . . . . . . . . . . . 64oC/W 12oC/W Power Dissipation per Package (PD) For TA = -55oC to +100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1W For TA = +100oC to +125oC. . . . . . . .Derate Linearly at 13mW/oC
CAUTION: As with all semiconductors, stress listed under "Absolute Maximum Ratings" may be applied to devices (one at a time) without resulting in permanent damage. This is a stress rating only. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. The conditions listed under "Electrical Performance Characteristics" are the only conditions recommended for satisfactory device operation.
Operating Conditions
Supply Voltage (VCC). . . . . . . . . . . . . . . . . . . . . . . . +4.5V to +5.5V Input Rise and Fall Times at 4.5V VCC (TR, TF) . . . . 100ns/V Max. Operating Temperature Range (TA) . . . . . . . . . . . . -55oC to +125oC Input Low Voltage (VIL). . . . . . . . . . . . . . . . . . . . . . . . . 0.0V to 0.8V Input High Voltage (VIH) . . . . . . . . . . . . . . . . . . . . . . .VCC/2 to VCC
TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS GROUP A SUBGROUPS 1 2, 3 1 2, 3 1 2, 3 1, 2, 3 1, 2, 3 1, 2, 3 1, 2, 3 1 2, 3 7, 8A, 8B LIMITS TEMPERATURE +25oC +125oC, -55oC +25oC +125oC, -55oC +25oC +125oC, -55oC +25oC, +125oC, -55oC +25oC, +125oC, -55oC +25oC, +125oC, -55oC +25oC, +125oC, -55oC +25oC +125oC, -55oC +25oC, +125oC, -55oC MIN 4.8 4.0 -4.8 -4.0 VCC -0.1 VCC -0.1 -0.5 -5.0 4.0 MAX 10 200 0.1 0.1 +0.5 +5.0 0.5 UNITS A A mA mA mA mA V V V V A A -
PARAMETERS Quiescent Current
SYMBOL ICC
(NOTE 1) CONDITIONS VCC = 5.5V, VIN = VCC or GND VCC = 4.5V, VIH = 4.5V, VOUT = 0.4V, VIL = 0V VCC = 4.5V, VIH = 4.5V, VOUT = VCC -0.4V, VIL = 0V VCC = 4.5V, VIH = 2.25V, IOL = 50A, VIL = 0.8V VCC = 5.5V, VIH = 2.75V, IOL = 50A, VIL = 0.8V
Output Current (Sink) Output Current (Source) Output Voltage Low
IOL
IOH
VOL
Output Voltage High
VOH
VCC = 4.5V, VIH = 2.25V, IOH = -50A, VIL = 0.8V VCC = 5.5V, VIH = 2.75V, IOH = -50A, VIL = 0.8V
Input Leakage Current Noise Immunity Functional Test NOTE:
IIN
VCC = 5.5V, VIN = VCC or GND VCC = 4.5V, VIH = 2.25V, VIL = 0.8V (Note 2)
FN
1. All voltages reference to device GND. 2. For functional tests VO 4.0V is recognized as a logic "1", and VO 0.5V is recognized as a logic "0".
7-142
Specifications HCTS11MS
TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS GROUP A SUBGROUPS 9 10, 11 TPLH VCC = 4.5V 9 10, 11 NOTES: 1. All voltages referenced to device GND. 2. AC measurements assume RL = 500, CL = 50pF, Input tr = tf = 3ns, VIL = GND, VIH = 3V. LIMITS TEMPERATURE +25oC +125oC, -55oC +25oC +125oC, -55oC MIN 2 2 2 2 MAX 18 20 20 22 UNITS ns ns ns ns
PARAMETER Input to Output
SYMBOL TPHL
(NOTES 1, 2) CONDITIONS VCC = 4.5V
TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS LIMITS PARAMETER Capacitance Power Dissipation Input Capacitance SYMBOL CPD CONDITIONS VCC = 5.0V, f = 1MHz NOTES 1 1 CIN VCC = Open, f = 1MHz 1 1 Output Transition Time NOTES: 1. The parameters listed in Table 3 are controlled via design or process parameters. Min and Max Limits are guaranteed but not directly tested. These parameters are characterized upon initial design release and upon design changes which affect these characteristics. TTHL TTLH VCC = 4.5V 1 1 TEMPERATURE +25oC +125oC +25oC +125oC +25oC +125oC MIN MAX UNITS pF pF pF pF ns ns
Typical 26 Typical 56 10 10 15 22
TABLE 4. DC POST RADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS 200K RAD LIMITS MIN 4.0 -4.0 MAX 0.2 0.1 1M RAD LIMITS MIN 4.0 -4.0 MAX 1.0 0.1 UNITS mA mA mA V
PARAMETERS Quiescent Current Output Current (Sink) Output Current (Source) Output Voltage Low
SYMBOL ICC IOL IOH VOL
(NOTES 1, 2) CONDITIONS VCC = 5.5V, VIN = VCC or GND VCC = 4.5V, VIN = VCC or GND, VOUT = 0.4V VCC = 4.5V, VIN = VCC or GND, VOUT = VCC -0.4V VCC = 4.5V and 5.5V, VIH = VCC/2, VIL = 0.8V at 200K RAD, VIL = 0.3V at 1M RAD, IOL = 50A VCC = 4.5V and 5.5V, VIH = VCC/2, VIL = 0.8V at 200K RAD, VIL = 0.3V at 1M RAD, IOH = -50A VCC = 5.5V, VIN = VCC or GND VCC = 4.5V, VIH = 2.25V, VIL = 0.8V at 200K RAD, VIL = 0.3V at 1M RAD (Note 3)
TEMPERATURE +25oC +25oC +25oC +25oC
Output Voltage High
VOH
+25oC
VCC -0.1
-
VCC -0.1
-
V
Input Leakage Current Noise Immunity Functional Test
IIN FN
+25oC +25oC
-
5 -
-
5 -
A -
7-143
Specifications HCTS11MS
TABLE 4. DC POST RADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS (Continued) 200K RAD LIMITS MIN 2 2 MAX 20 22 1M RAD LIMITS MIN 2 2 MAX 25 26 UNITS ns ns
PARAMETERS Input to Output
SYMBOL TPHL TPLH
(NOTES 1, 2) CONDITIONS VCC = 4.5V
TEMPERATURE +25oC +25oC
NOTES: 1. All voltages referenced to device GND. 2. AC measurements assume RL = 500, CL = 50pF, Input tr = tf = 3ns, VIL = GND, VIH = 3V. 3. For functional tests VO 4.0V is recognized as a logic "1", and VO 0.5V is recognized as a logic "0".
TABLE 5. BURN-IN AND OPERATING LIFE TEST, DELTA PARAMETERS (+25oC) GROUP B SUBGROUP 5 5
PARAMETER ICC IOL/IOH
DELTA LIMIT 3A -15% of 0 Hour
TABLE 6. APPLICABLE SUBGROUPS CONFORMANCE GROUPS Initial Test (Preburn-In) Interim Test I (Postburn-In) Interim Test II (Postburn-In) PDA Interim Test III (Postburn-In) PDA Final Test Group A (Note 1) Group B Subgroup B-5 Subgroup B-6 Group D NOTE: 1. Alternate Group A in accordance with method 5005 of MIL-STD-883 may be exercised. METHOD 100%/5004 100%/5004 100%/5004 100%/5004 100%/5004 100%/5004 100%/5004 Sample/5005 Sample/5005 Sample/5005 Sample/5005 GROUP A SUBGROUPS 1, 7, 9 1, 7, 9 1, 7, 9 1, 7, 9, Deltas 1, 7, 9 1, 7, 9, Deltas 2, 3, 8A, 8B, 10, 11 1, 2, 3, 7, 8A, 8B, 9, 10, 11 1, 2, 3, 7, 8A, 8B, 9, 10, 11, Deltas 1, 7, 9 1, 2, 3, 7, 8A, 8B, 9, 10, 11 Subgroups 1, 2, 3, 9, 10, 11 ICC, IOL/H READ AND RECORD ICC, IOL/H ICC, IOL/H ICC, IOL/H
TABLE 7. TOTAL DOSE IRRADIATION CONFORMANCE GROUPS Group E Subgroup 2 NOTE: 1. Except FN test which will be performed 100% Go/No-Go. TEST METHOD 5005 PRE RAD 1, 7, 9 POST RAD Table 4 READ AND RECORD PRE RAD 1, 9 POST RAD Table 4 (Note 1)
7-144
Specifications HCTS11MS
TABLE 8. STATIC AND DYNAMIC BURN-IN TEST CONNECTIONS OSCILLATOR OPEN GROUND 1/2 VCC = 3V 0.5V VCC = 6V 0.5V 50kHz 25kHz
STATIC BURN-IN I TEST CONDITIONS (Note 1) 6, 8, 12 1, 2, 3, 4, 5, 7, 9, 10, 11, 13 14 -
STATIC BURN-IN II TEST CONDITIONS (Note 1) 6, 8, 12 7 1, 2, 3, 4, 5, 9, 10, 11, 13, 14 -
DYNAMIC BURN-IN TEST CONDITIONS (Note 2) NOTE: 1. Each pin except VCC and GND will have a resistor of 10K 5% for static burn-in 2. Each pin except VCC and GND will have a resistor of 1K 5% for dynamic burn-in 7 6, 8, 12 14 1, 2, 3, 4, 5, 9, 10, 11, 13 -
TABLE 9. IRRADIATION TEST CONNECTIONS OPEN 6, 8, 12 GROUND 7 VCC = 5V 0.5V 1, 2, 3, 4, 5, 9, 10, 11, 13, 14
NOTE: Each pin except VCC and GND will have a resistor of 47K 5% for irradiation testing. Group E, Subgroup 2, sample size is 4 dice/wafer 0 failures.
AC Timing Diagrams
VIH VS VIL TPLH TPHL VOH INPUT
AC Load Circuit
DUT TEST POINT CL RL
CL = 50pF VS VOL TTLH 80% VOL 20% 80% 20% TTHL OUTPUT RL = 500
VOH
OUTPUT
AC VOLTAGE LEVELS PARAMETER VCC VIH VS VIL GND HCTS 4.50 3.00 1.30 0 0 UNITS V V V V V
7-145
HCTS11MS Die Characteristics
DIE DIMENSIONS: 87 x 88 mils 2.20 x 2.24mm METALLIZATION: Type: SiAl Metal Thickness: 11kA 1kA GLASSIVATION: Type: SiO2 Thickness: 13kA 2.6kA DIE ATTACH: Material: Silver Epoxy WORST CASE CURRENT DENSITY: <2.0 x 105A/cm2 BOND PAD SIZE: 100m x 100m 4 mils x 4 mils
Metallization Mask Layout
HCTS11MS
A1 (1) VCC (14) C1 (13)
B1 (2)
(12) Y1
(11) C3 A2 (3)
B2 (4)
(10) B3
C2 (5)
(9) A3
(6) Y2
(7) GND
(8) Y3
7-146
HCTS11MS
All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.
Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site http://www.intersil.com
Sales Office Headquarters
NORTH AMERICA Intersil Corporation P. O. Box 883, Mail Stop 53-204 Melbourne, FL 32902 TEL: (407) 727-9207 FAX: (407) 724-7240 EUROPE Intersil SA Mercure Center 100, Rue de la Fusee 1130 Brussels, Belgium TEL: (32) 2.724.2111 FAX: (32) 2.724.22.05 ASIA Intersil (Taiwan) Ltd. Taiwan Limited 7F-6, No. 101 Fu Hsing North Road Taipei, Taiwan Republic of China TEL: (886) 2 2716 9310 FAX: (886) 2 2715 3029
File Number 7-147

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